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 PROFET(R) ITS621L1
Smart Two Channel Highside Power Switch for Industrial Applications
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in ON-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage protection Operating voltage Operating temperature
Vbb(AZ) Vbb(on) Ta
43 V 5.0 ... 34 V -30...+85 C
both
channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr)
each parallel 100 50 m 4.4 8.5 A 8 8 A
PG-TO220AB/7
Application
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications * All types of resistive, inductive and capacitve loads * Replaces electromechanical relays, fuses and discrete circuits
7 1
7
Standard
Straight leads
1
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
Voltage source V
Logic
Overvoltage protection
Current limit 1
Gate 1 protection
+ V bb
4
Voltage sensor
Level shifter Rectifier 1 Charge pump 1 Charge pump 2
Limit for unclamped ind. loads 1 Open load Short to Vbb detection 1 Current limit 2 Gate 2 protection
OUT1
3 6 5
IN1 IN2
Temperature sensor 1
1
ESD
ST
Logic
Level shifter Rectifier 2
Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2
OUT2
Temperature sensor 2
R O1 GND R O2
7
Load
PROFET 2
GND Signal GND
Load GND
1)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Infineon Technologies AG
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2006-Mar-28
PROFET(R) ITS621L1
Pin 1 2 3 4 5 6 7 Symbol OUT1 (Load, L) GND IN1 Vbb ST IN2 OUT2 (Load, L) Function Output 1, protected high-side power output of channel 1 Logic ground Input 1, activates channel 1 in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure Input 2, activates channel 2 in case of logical high signal Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 , RL= 2.7 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const. one channel, IL = 4.4 A, ZL = 32 mH, 0 : both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 :
see diagrams on page 9
Symbol Vbb Vbb VLoad dump4) IL Tj Ta Tstg Ptot EAS
Values 43 34 60 self-limited +150 -30 ...+85 -40 ...+105 75 395 790 1.0 2.0 -10 ... +16 2.0 5.0
Unit V V V A C
W mJ
Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 7
IN: VESD all other pins: VIN IIN IST
kV V mA
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
2)
3) 4)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG
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2006-Mar-28
PROFET(R) ITS621L1 Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA min ---Values typ max -1.7 -3.4 -75 Unit K/W
Electrical Characteristics
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 2 A Tj=25 C: RON Tj=150 C: each channel Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C IL(GNDhigh) ton toff dV /dton -dV/dtoff -3.5 6.8 -80 80 0.1 0.1 80 160 4.4 8.5 -200 200 --100 200 --10 400 400 1 1 m
A mA s
V/s V/s
Infineon Technologies AG
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2006-Mar-28
PROFET(R) ITS621L1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Operating Parameters Operating voltage5) Undervoltage shutdown Undervoltage restart
Tj =-40...+150C: Tj =-40...+150C: Tj =-40...+25C: Tj =+150C: Undervoltage restart of charge pump see diagram page 13 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 6) Overvoltage protection Tj =-40...+150C: Ibb=40 mA Standby current (pin 4) VIN=0 Tj=-40...+25C: Tj= 150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 2)7), VIN=5 V both channels on, Tj =-40...+150C Operating current (Pin 2)7) one channel on, Tj =-40...+150C:
Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ)
5.0 3.5 ---34 33 -42
---5.6 0.2 --0.5 47
34 5.0 5.0 7.0 7.0 -43 ----
V V V V V V V V V
Ibb(off) IL(off) IGND IGND
------
14 17 -4 2
30 35 12 6 3
A A mA mA
5) 6) 7)
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Infineon Technologies AG
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2006-Mar-28
PROFET(R) ITS621L1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions8) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) Reverse battery voltage drop (Vout > Vbb) IL = -2.9 A, each channel Tj=150 C: Diagnostic Characteristics Open load detection current
(on-condition)
IL(SCp) 11 9 5 IL(SCr) -VON(CL) Tjt 41 150 ---8 47 -10 -610 -53 --32 -A V C K V mV 18 14 8 25 22 14 A
Tjt
-Vbb -VON(rev)
Tj=-40 C: IL (OL) Tj=25 ..150C:
20 20 2 4
--3 10
400 300 4 30
mA V k
Open load detection voltage10) (off-condition) VOUT(OL) Tj=-40..150C: Internal output pull down (pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150C RO
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 9) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 10) External pull up resistor required for open load detection in off state.
Infineon Technologies AG
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2006-Mar-28
PROFET(R) ITS621L1
Parameter and Conditions, each channel
at Tj = 25 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max 2.5 1.7 1.5 -1 20 100 --3.5 --0.5 -50 320 5 200 6 3.5 --50 90 800 20 600
Unit
Input and Status Feedback11) Input resistance Tj=-40..150C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 12), Tj =-40..+150C Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 12), Tj =-40..+150C Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+25C, IST = +1.6 mA: Tj = +150C, IST = +1.6 mA:
RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST OL5) td(ST)
k V V V A A s s s
VST(high) VST(low)
5.4 ---
6.1 ---
-0.4 0.6
V
11)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Infineon Technologies AG
6
2006-Mar-28
PROFET(R) ITS621L1 Truth Table
IN1 Normal operation L L H H L L H L H X L L H L H X L X H L H X X X IN2 L H L H L H X L L H L H X L L H L H X X X L H X OUT1 L L H H Z Z H L H X H H H L H X L L L L L X X L OUT2 L H L H L H X Z Z H L H X H H H L L L X X L L L ST ITS621L1 H H H H H(L12)) H L H(L12)) H L L13) H H(L14)) L13) H H(L14)) H L L H L H L H
Open load
Channel 1
Channel 2
Short circuit to Vbb
Channel 1
Channel 2
Overtemperature
both channel
Channel 1 Channel 2 Undervoltage/ Overvoltage
L = "Low" Level H = "High" Level
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Ibb VON1 VON2 OUT1 IN2 PROFET OUT2 GND 2 R GND IGND 7 V OUT1 VOUT2 1 I L1 I L2
Input circuit (ESD protection)
R IN I
4 3 IN1
V bb
I IN1 I IN2
Vbb
ESD-ZD I GND
I
I
6 I ST
ST V V IN1 IN2 V 5 ST
ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
12) 13)
With additional external pull up resistor An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 14) Low resistance to V may be detected in the ON-state by the no-load-detection bb
Infineon Technologies AG
7
2006-Mar-28
PROFET(R) ITS621L1
Status output
+5V
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
+ V bb
R ST(ON)
ST
GND
ESDZD
ON
VON
ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
OUT
Logic unit
Open load detection
Inductive and overvoltage output clamp
+ V bb V Z
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
R
VON
EXT
OFF
OUT GND
V
OUT
PROFET
Logic unit Open load detection
R O
VON clamped to 47 V typ.
Signal GND
Overvolt. and reverse batt. protection
+ V bb
GND disconnect
V bb 3 IN1 IN2 ST 4 Ibb
IN1 IN2
RI Logic
V
Z2
Vbb OUT1 PROFET OUT2 GND 2 V GND
R ST
ST V
1
Z1 GND
6 5 V
Signal GND
7
R GND
V V IN1 IN2 ST
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ, RGND= 150
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
Infineon Technologies AG
8
2006-Mar-28
PROFET(R) ITS621L1
GND disconnect with GND pull up
4 3 V IN1 6 V IN2 5 IN2 ST IN1 Vbb OUT1 PROFET OUT2 GND 2 V 1
Inductive Load switch-off energy dissipation
E bb E AS Vbb PROFET OUT EL ELoad
IN
7
=
GND
ST GND ZL
V
V bb
ST
{
L RL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive load
4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L IL*RL ) EAS= 2*R *(Vbb + |VOUT(CL)|)* ln (1+ |V L OUT(CL)|
2
V
Maximum allowable load inductance for a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150C,TC = 150C const., Vbb = 12 V, RL = 0 L [mH]
10000
bb
Normal load current can be handled by the PROFET itself.
Vbb disconnect with charged external inductive load
4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 D
1000
100
V
bb
10
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
1 3 5 7 9 11
IL [A]
Infineon Technologies AG
9
2006-Mar-28
PROFET(R) ITS621L1
Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W]
10
1
0.1
D= 0.5 0.2 0.1 0.05 0.02 0.01 0
0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s] Typ. transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W]
1
0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Infineon Technologies AG
10
2006-Mar-28
PROFET(R) ITS621L1
Timing diagrams
Figure 1a: Vbb turn on:
IN1 IN2
Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels
Figure 2b: Switching an inductive load
IN
t ST V bb V
*)
d(ST)
V
OUT1
OUT
V
OUT2
IL I L(OL) t t
*) if the time constant of load is too large, open-load-status may occur
ST open drain
Figure 2a: Switching a lamp:
IN
Figure 3a: Short circuit shut down by overtempertature, reset by cooling
other channel: normal operation
IN
ST IL V
OUT
I L(SCp)
I L(SCr)
I
L
t
ST t
Heating up may require several milliseconds, depending on external conditions
Infineon Technologies AG
11
2006-Mar-28
PROFET(R) ITS621L1
Figure 4a: Overtemperature: Reset if Tj IN1 IN IN2 ST V
OUT1
channel 2: normal operation
V
OUT
I
L1
channel 1: open load T
J
t ST
d(ST)
t
d(ST OL4)
t
d(ST)
t
d(ST OL5)
t
t
Figure 5a: Open load: detection in ON-state, open load occurs in on-state
IN1
Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load
IN1
IN2
channel 2: normal operation
IN2
channel 2: normal operation
VOUT1
V
OUT1
IL1
channel 1: open load
normal load
open load t d(ST OL1)
I L1
channel 1: open load
t d(ST OL1) t d(ST OL2) ST
t d(ST OL2) t
ST
t d(ST)
t
d(ST)
t d(ST OL5) t
td(ST OL1) = 30 s typ., td(ST OL2) = 20 s typ
td(ST OL5) depends on external circuitry because of high impedance
Infineon Technologies AG
12
2006-Mar-28
PROFET(R) ITS621L1
Figure 6a: Undervoltage: Figure 7a: Overvoltage:
IN
IN
V
bb V
bb(under)
Vbb Vbb(u cp) Vbb(u rst)
V ON(CL)
Vbb(over)
V bb(o rst)
V OUT
V
OUT
ST open drain t
ST
t
Figure 6b: Undervoltage restart of charge pump
V on VON(CL)
off-state
on-state
V
bb(over)
V
bb(u rst)
V
bb(o rst)
V V
bb(under)
bb(u cp)
charge pump starts at Vbb(ucp) =5.6 V typ.
Infineon Technologies AG
off-state
V bb
13
2006-Mar-28
PROFET(R) ITS621L1
Package and Ordering Code
All dimensions in mm
Standard PG-TO220AB/7
ITS621L1
Ordering code SP000219533
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
PG-TO220AB/7, Opt. E3230 Ordering code
ITS621L1 E3230 SP000221224
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14
2006-Mar-28


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